@Article{MedeirosPSFSSMM:2012:SiThFi,
               author = "Medeiros, Henrique Souza and Pessoa, Rodrigo Savio and Sag{\'a}s, 
                         J. C. and Fraga, Mariana A and Santos, L{\'u}cia Vieira and Silva 
                         Sobrinho, Argemiro S da and Massi, Marcos and Maciel, Homero S.",
          affiliation = "{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and 
                         {Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and 
                         {Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and 
                         {Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and 
                         {Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)}",
                title = "SixCy Thin Films Deposited at Low Temperature by Dual DC Magnetron 
                         Sputtering:Effect of Power Supplied to Si and C Cathode Targets on 
                         Film Physicochemical Properties",
              journal = "Materials Science Forum. Silicon Carbide and Releted Material Book 
                         Series",
                 year = "2012",
               volume = "717 - 720",
               number = "PTS 1 AND 2",
                pages = "197--201",
                 note = "14th International Conference on Silicon Carbide and Related 
                         Materials (ICSCRM 2011) Location: Cleveland, OH Date: SEP 11-16, 
                         2011",
             keywords = "Chemistry Analysis, DC Dual Magnetron Sputtering, 
                         FilmStoichiometry, Low Temperature Deposition, Silicon Carbide 
                         Thin Films.",
             abstract = "A DC dual magnetron sputtering system with graphite (C) and 
                         silicon (Si) targets was used to grow stoichiometric and 
                         non-stoichiometric silicon carbide (SixCy) thin films at low 
                         temperature. Two independently DC power sources were used to 
                         enable the total discharge power be shared, under certain 
                         proportions, between the Si and C magnetron cathodes. The 
                         motivation was to control the sputtering rate of each target so as 
                         to vary the stoichiometric ratio x/y of the deposited films. The 
                         species content, thickness and chemical bonds of as-deposited 
                         SixCy films were studied by Rutherford backscattering spectroscopy 
                         (RBS), profilometry analysis and Fourier transform infrared 
                         absorption (FTIR), respectively. Overall, the present work reveals 
                         a new reliable plasma sputtering technique for low temperature 
                         growth of amorphous SixCy thin films with the capability of tuning 
                         the degree of formation of a-SiC, a-Si and a-C bonds in the film 
                         bulk.",
                  doi = "10.4028/www.scientific.net/MSF.717-720.197",
                  url = "http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.197",
                label = "lattes: 4359261479122193 6 MedeirosPPFSSSMM:2012:SiThFi",
             language = "en",
           targetfile = "medeiros_sixcy.pdf",
        urlaccessdate = "30 abr. 2024"
}